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SMD Type
Silicon PNP Triple Diffused Type 2SA1255
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
Features
High voltage. Small package.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -200 -200 -5 -50 -20 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO Testconditons VCB = -200 V, IE = 0 VEB = -5 V, IC = 0 -200 -200 70 -0.2 -0.75 50 100 3 0.3 2 0.4 7 240 -1 -1.5 V V MHz pF is is is Min Typ Max -0.1 -0.1 Unit iA iA V V
V(BR)CBO IC = -0.1 mA, IE = 0 V(BR)CEO IC = -1 mA, IB = 0 hFE VCE = -3 V, IC = -10 mA
VCE (sat) IC = -10 mA, IB = -1 mA VBE (sat) IC = -10 mA, IB = -1 mA fT Cob ton tstg tf VCE = -10 V, IC = -2 mA VCB = -10 V, IE = 0, f = 1 MHz pulse width = 5is,duty cycle 2 IB2=-IB1=0.6 Ma VCC=-50V,IC=-6mA
hFE Classification
Marking Rank hFE OO O 70 140 OY Y 120 240
+0.1 0.38-0.1
0-0.1
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